CPMF-1200-S080B
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Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 1200V 50A DIE
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Technical Details
Technical
Vgs (Max) +25V, -5V
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 90.8nC @ 20V
Current - Continuous Drain (Id) @ 25°C 50A Tj
Input Capacitance (Ciss) (Max) @ Vds 1915pF @ 800V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 110m Ω @ 20A, 20V
FET Type N-Channel
Power Dissipation-Max 313mW Tj
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series Z-FET?
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Package / Case Die
Mounting Type Surface Mount
Alternative Model
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