Avalanche Energy Rating (Eas) 242 mJ
DS Breakdown Voltage-Min 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 49A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V
Current - Continuous Drain (Id) @ 25°C 31A Ta 49A Tc
Input Capacitance (Ciss) (Max) @ Vds 8705pF @ 15V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 1.8m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 96W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series PowerTrench?, SyncFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ