Operating Temperature -55?°C~175?°C TJ
Series HEXFET??, StrongIRFETa??
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m ?? @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150??A
Input Capacitance (Ciss) (Max) @ Vds 7020pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 173A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 173A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 700A
Avalanche Energy Rating (Eas) 554 mJ