FDH047AN08A0
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Channel PowerTrench MOSFET
PDF
/
Buying Options
Total Price: USD $5.46
Unit Price: USD $5.4648
≥1 USD $5.4648
≥10 USD $4.68424
≥100 USD $3.444461
≥500 USD $3.100011
≥1000 USD $2.904827
Inventory: 305
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.39g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.7MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 80A
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Rise Time 88 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 475 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
FDH047AN08A0+price,FDH047AN08A0+datasheet,FDH047AN08A0+in stock,buy+FDH047AN08A0,finder+FDH047AN08A0,FDH047AN08A0+tutorials,FDH047AN08A0+download