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NTHD3101FT3G

ON Semiconductor
RoHS
/
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET -20V -4.4A P-Channel w/4.1A Schottky
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

FET Feature Schottky Diode (Isolated)
Pulsed Drain Current-Max (IDM) 13A
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3.2A
Turn-Off Delay Time 16 ns
Fall Time (Typ) 12.4 ns
Vgs (Max) ±8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Rise Time 11.7ns
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.2A Tj
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 3.2A, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Power Dissipation 1.1W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating -4.4A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form C BEND
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -20V
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Surface Mount YES
Package / Case 8-SMD, Flat Lead
Mounting Type Surface Mount

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