BS170
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
FAIRCHILD SEMICONDUCTOR BS170.....MOSFET Transistor, N Channel, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
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Buying Options
Total Price: USD $0.2
Unit Price: USD $0.203352
≥1 USD $0.203352
≥10 USD $0.165992
≥100 USD $0.149979
≥500 USD $0.1862
≥1000 USD $0.1805
Inventory: 131
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 4.535924g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 500mA
Base Part Number BS170
Number of Elements 1
Voltage 60V
Power Dissipation-Max 830mW Ta
Element Configuration Single
Current 5A
Power Dissipation 830mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 500mA
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 24pF
Drain to Source Resistance 5Ohm
Rds On Max 5 Ω
Nominal Vgs 2.1 V
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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