FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 460 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 75V
Turn On Delay Time 100 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Reach Compliance Code not_compliant
Subcategory FET General Purpose Powers
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)