RSD221N06TL
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 22A CPT3
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.48355
≥1 USD $0.48355
≥10 USD $0.3971
≥100 USD $0.38475
≥500 USD $0.3724
≥1000 USD $0.36005
Inventory: 990
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e2
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 850mW Ta 20W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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