SI8481DB-T1-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Mosfet P-channel 20V 9.7A 4-PIN Micro Foot T/r
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Physical
Mounting Type Surface Mount
Package / Case 4-UFBGA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET? Gen III
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-PBGA-B4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) -6.2A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Dimensions
Height 600μm
Compliance
RoHS Status ROHS3 Compliant
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