Power Dissipation Ambient-Max 0.15W
Drain to Source Resistance 5.8Ohm
Power Dissipation-Max (Abs) 0.15W
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) 0.1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 105 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 50V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)