IPI032N06N3 G
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 120A TO262-3
PDF
/
Buying Options
Total Price: USD $2.62
Unit Price: USD $2.623155
≥1 USD $2.623155
≥10 USD $2.47467
≥100 USD $2.334593
≥500 USD $2.202438
≥1000 USD $2.077777
Inventory: 911
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 118μA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.0032Ohm
Pulsed Drain Current-Max (IDM) 480A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 235 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
IPI032N06N3 G+price,IPI032N06N3 G+datasheet,IPI032N06N3 G+in stock,buy+IPI032N06N3 G,finder+IPI032N06N3 G,IPI032N06N3 G+tutorials,IPI032N06N3 G+download