PHP222NQ04LT,127
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 75A TO220AB
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 560 mJ
DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 240A
Drain-source On Resistance-Max 0.0035Ohm
Drain Current-Max (Abs) (ID) 75A
JEDEC-95 Code TO-220AB
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 93.6nC @ 5V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 7880pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 2.8m Ω @ 25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series TrenchMOS?
Published 1997
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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