Avalanche Energy Rating (Eas) 2500 mJ
Drain-source On Resistance-Max 0.24Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 31A
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Input Capacitance (Ciss) (Max) @ Vds 4670pF @ 25V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Rds On (Max) @ Id, Vgs 240m Ω @ 15.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 565W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ