Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 37A
Turn-Off Delay Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Input Capacitance (Ciss) (Max) @ Vds 9835pF @ 25V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Rds On (Max) @ Id, Vgs 330m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1135W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish PURE MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ