IXTB62N50L
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 62A PLUS264
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Buying Options
Total Price: USD $106.93
Unit Price: USD $106.931766
≥1 USD $106.931766
≥200 USD $42.666624
≥500 USD $41.240815
≥1000 USD $40.5371
Inventory: 8208
Minimum: 1
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Technical Details
Technical
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) ±30V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 62A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 150A
Avalanche Energy Rating (Eas) 5000 mJ
Rise Time 85ns
Gate Charge (Qg) (Max) @ Vgs 550nC @ 20V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 31A, 20V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 800W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 800W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Resistance 100mOhm
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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