Capacitance - Input 5.2nF
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 3000 mJ
Drain-source On Resistance-Max 0.22Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 38A
Turn-Off Delay Time 39 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 800V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 694W
Configuration SINGLE WITH BUILT-IN DIODE
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER