BSS84P E6433
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 170MA SOT-23
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Input Capacitance (Ciss) (Max) @ Vds 19pF @ 25V
Vgs(th) (Max) @ Id 2V @ 20μA
Rds On (Max) @ Id, Vgs 8 Ω @ 170mA, 10V
FET Type P-Channel
Power Dissipation-Max 360mW Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SIPMOS?
Published 2002
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Alternative Model
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