VP2110K1-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 100V 0.12A 3-Pin SOT-23
PDF
/
Buying Options
Total Price: USD $0.73
Unit Price: USD $0.7304
≥1 USD $0.7304
≥10 USD $0.6072
≥100 USD $0.5544
Inventory: 1135
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120mA Tj
Rise Time 5 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 5 ns
Continuous Drain Current (ID) 120mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Feedback Cap-Max (Crss) 8 pF
Dimensions
Height 950μm
Length 2.9mm
Width 1.3mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
VP2110K1-G+price,VP2110K1-G+datasheet,VP2110K1-G+in stock,buy+VP2110K1-G,finder+VP2110K1-G,VP2110K1-G+tutorials,VP2110K1-G+download