Avalanche Energy Rating (Eas) 560 mJ
DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 240A
Drain-source On Resistance-Max 0.005Ohm
Drain Current-Max (Abs) (ID) 75A
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 3140pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 4m Ω @ 25A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 150W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ