LP0701N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
PDF
/
Buying Options
Total Price: USD $1.72
Unit Price: USD $1.7248
≥1 USD $1.7248
≥10 USD $1.4344
≥100 USD $1.32
Inventory: 552
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.19mm
Length 5.21mm
Height 5.33mm
Technical
Feedback Cap-Max (Crss) 60 pF
Drain to Source Breakdown Voltage -16.5V
Drain Current-Max (Abs) (ID) 0.5A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 500mA
Turn-Off Delay Time 30 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±10V
Drive Voltage (Max Rds On,Min Rds On) 2V 5V
Drain to Source Voltage (Vdss) 16.5V
Rise Time 20 ns
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 15V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 300mA, 5V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 20 ns
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Tc
Number of Channels 1
Number of Elements 1
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Additional Feature LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2013
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
Recommended For You
LP0701N3-G+price,LP0701N3-G+datasheet,LP0701N3-G+in stock,buy+LP0701N3-G,finder+LP0701N3-G,LP0701N3-G+tutorials,LP0701N3-G+download