Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 240A
Drain to Source Breakdown Voltage 300V
Drain-source On Resistance-Max 0.045Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 45m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 450W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ