LND150N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92
PDF
/
Buying Options
Total Price: USD $0.53
Unit Price: USD $0.528
≥1 USD $0.528
≥10 USD $0.4576
≥100 USD $0.4048
Inventory: 1142
Minimum: 1
-
+
Technical Details
Technical
FET Feature Depletion Mode
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 30mA
Turn-Off Delay Time 100 ns
Fall Time (Typ) 450 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 0V
Rise Time 450ns
Current - Continuous Drain (Id) @ 25°C 30mA Tj
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 90 ns
Power Dissipation 740mW
Element Configuration Single
Power Dissipation-Max 740mW Ta
Number of Channels 1
Number of Elements 1
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Additional Feature HIGH INPUT IMPEDANCE
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2014
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Weight 219.992299mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
Recommended For You
LND150N3-G+price,LND150N3-G+datasheet,LND150N3-G+in stock,buy+LND150N3-G,finder+LND150N3-G,LND150N3-G+tutorials,LND150N3-G+download