FET Feature Depletion Mode
Pulsed Drain Current-Max (IDM) 0.5A
Drain to Source Breakdown Voltage 700V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 170mA
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Current - Continuous Drain (Id) @ 25°C 170mA Tj
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Rds On (Max) @ Id, Vgs 42 Ω @ 100mA, 0V
Transistor Application SWITCHING
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ