IXUC100N055
RoHS
/
Package ISOPLUS220?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS SEMICONDUCTOR IXUC100N055MOSFET Transistor, N Channel, 100 A, 55 V, 7.7 mohm, 10 V, 4 V
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Buying Options
Total Price: USD $32.95
Unit Price: USD $32.95455
≥1 USD $32.95455
≥10 USD $27.03985
≥100 USD $26.19435
≥500 USD $25.3498
≥1000 USD $24.50525
Inventory: 1079
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS220?
Number of Pins 220
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 35
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 115ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 155 ns
Turn-Off Delay Time 230 ns
Reverse Recovery Time 80 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 4V
JEDEC-95 Code TO-273AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0077Ohm
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 500 mJ
Isolation Voltage 2.5kV
Nominal Vgs 4 V
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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