DS Breakdown Voltage-Min 400V
Pulsed Drain Current-Max (IDM) 0.68A
Drain Current-Max (Abs) (ID) 0.17A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 400V
Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Input Capacitance (Ciss) (Max) @ Vds 154pF @ 25V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Rds On (Max) @ Id, Vgs 25 Ω @ 170mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ