Avalanche Energy Rating (Eas) 20 mJ
Pulsed Drain Current-Max (IDM) 30A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.085Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 256pF @ 25V
Vgs(th) (Max) @ Id 4V @ 25μA
Rds On (Max) @ Id, Vgs 85m Ω @ 6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 33W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ