IXTU01N80
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 0.1A TO-251
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Pulsed Drain Current-Max (IDM) 0.4A
Drain to Source Breakdown Voltage 800V
Drain Current-Max (Abs) (ID) 0.1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 28 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 12ns
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Tc
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Rds On (Max) @ Id, Vgs 50 Ω @ 100mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 25W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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