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IRF7665S2TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric SB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V DIRECTFET SB
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 1118
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.4W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 6.4 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 7.1 ns
Continuous Drain Current (ID) 14.4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.062Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 58A
Nominal Vgs 4 V

Dimensions

Height 508μm
Length 4.826mm
Width 3.9624mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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