IXTT82N25P
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 250V 82A 3-Pin(2+Tab) TO-268
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Buying Options
Total Price: USD $9.32
Unit Price: USD $9.3192
≥1 USD $9.3192
≥10 USD $7.44245
≥100 USD $6.65896
≥500 USD $5.875549
≥1000 USD $5.28799
Inventory: 515
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 1000 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 250V
Drain-source On Resistance-Max 0.035Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 82A
Turn-Off Delay Time 78 ns
Fall Time (Typ) 22 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 41A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 500W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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