IRFBE20
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 1.8A TO-220AB
PDF
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Buying Options
Total Price: USD $9
Unit Price: USD $9.0022
≥1 USD $9.0022
≥10 USD $7.38625
≥100 USD $7.1554
≥500 USD $6.92455
≥1000 USD $6.6937
Inventory: 1258
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 1.8A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Power Dissipation 54W
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Input Capacitance 530pF
Drain to Source Resistance 6.5Ohm
Rds On Max 6.5 Ω
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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