Avalanche Energy Rating (Eas) 2500 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 200A
Drain-source On Resistance-Max 0.055Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 68A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Current - Continuous Drain (Id) @ 25°C 68A Tc
Input Capacitance (Ciss) (Max) @ Vds 33400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 55m Ω @ 34A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 568W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ