Feedback Cap-Max (Crss) 7 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 280mA
Turn-Off Delay Time 12.5 ns
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 5.85 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 250mW
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ