Avalanche Energy Rating (Eas) 2000 mJ
Pulsed Drain Current-Max (IDM) 250A
Drain to Source Breakdown Voltage 250V
Drain-source On Resistance-Max 0.029Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 96A
Turn-Off Delay Time 59 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Current - Continuous Drain (Id) @ 25°C 96A Tc
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 29m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 625W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ