IXFH42N20
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 42A TO-247AD
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Buying Options
Total Price: USD $18.64
Unit Price: USD $18.6428
≥1 USD $18.6428
≥10 USD $15.2969
≥100 USD $14.81905
≥500 USD $14.3412
≥1000 USD $13.8624
Inventory: 1256
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 42A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 42A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 168A
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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