IXTP60N20T
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Trench POWER MOSFETs 200v, 60A
PDF
/
Buying Options
Total Price: USD $1.52
Unit Price: USD $1.52095
≥1 USD $1.52095
≥10 USD $1.2483
≥100 USD $1.20935
≥500 USD $1.1704
≥1000 USD $1.13145
≥3000 USD $1.0146
Inventory: 8924
Minimum: 1
-
+
Technical Details
Technical
Vgs (Max) ±20V
Continuous Drain Current (ID) 60A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 150A
Avalanche Energy Rating (Eas) 700 mJ
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 500W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series Trench?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
Recommended For You
IXTP60N20T+price,IXTP60N20T+datasheet,IXTP60N20T+in stock,buy+IXTP60N20T,finder+IXTP60N20T,IXTP60N20T+tutorials,IXTP60N20T+download