IXFV22N50P
RoHS
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Package TO-220-3, Short Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 22A PLUS220
PDF
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Buying Options
Total Price: USD $24.16
Unit Price: USD $24.16325
≥1 USD $24.16325
≥10 USD $19.8265
≥100 USD $19.2071
≥500 USD $18.5877
≥1000 USD $17.96735
Inventory: 454
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 750 mJ
Pulsed Drain Current-Max (IDM) 55A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.27Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 72 ns
Fall Time (Typ) 21 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 25 ns
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Input Capacitance (Ciss) (Max) @ Vds 2630pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Rds On (Max) @ Id, Vgs 270m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 350W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 22A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3, Short Tab
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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