Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17 Ω @ 375mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 750mA Tc
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 3A
Avalanche Energy Rating (Eas) 100 mJ