Operating Temperature -55°C~150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 520W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 480nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 70V
Pulsed Drain Current-Max (IDM) 600A
Avalanche Energy Rating (Eas) 2000 mJ