Avalanche Energy Rating (Eas) 2500 mJ
Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 2.5kV
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 90 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 2500V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 8560pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 8.8 Ω @ 2.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 700W Tc
Qualification Status Not Qualified
Reach Compliance Code unknown
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ