Avalanche Energy Rating (Eas) 3500 mJ
Pulsed Drain Current-Max (IDM) 96A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.35Ohm
Continuous Drain Current (ID) 32A
Turn-Off Delay Time 95 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 11100pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 350m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 890W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ