VP0550N3-G-P013
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,P-CHANNEL ENHANCEMENT-MODE,-500V,125 Ohm3 TO-92AMMO
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.19mm
Length 5.21mm
Height 5.33mm
Technical
Drain to Source Breakdown Voltage -500V
Drain Current-Max (Abs) (ID) 0.054A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 54mA
Turn-Off Delay Time 10 ns
Fall Time (Typ) 10 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 500V
Rise Time 15ns
Current - Continuous Drain (Id) @ 25°C 54mA Tj
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 125 Ω @ 10mA, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 10 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code O-PBCY-T3
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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