IXTH4N150
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1500V 4A TO-247
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Buying Options
Total Price: USD $5.91
Unit Price: USD $5.9071
≥1 USD $5.9071
≥10 USD $4.8469
≥100 USD $4.6949
≥500 USD $4.54385
≥1000 USD $4.3928
≥3000 USD $3.93775
Inventory: 11259
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 350 mJ
DS Breakdown Voltage-Min 1500V
Pulsed Drain Current-Max (IDM) 12A
Drain-source On Resistance-Max 6Ohm
Drain Current-Max (Abs) (ID) 4A
Continuous Drain Current (ID) 4A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1500V
Gate Charge (Qg) (Max) @ Vgs 44.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 1576pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 6 Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 280W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 3 Weeks
Alternative Model
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