FD900R12IP4D
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
INFINEON FD900R12IP4DIGBT Array & Module Transistor, High Power, N Channel, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module
PDF
/
Inventory: 9030
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
VCEsat-Max 2.05 V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 1300 ns
Turn On Time 370 ns
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 900A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Element Configuration Single
Power Dissipation-Max 5.1kW
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X8
Pin Count 8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1
Pbfree Code yes
Physical
Number of Pins 10
Package / Case Module
Mount Screw
Alternative Model
Recommended For You
FD900R12IP4D+price,FD900R12IP4D+datasheet,FD900R12IP4D+in stock,buy+FD900R12IP4D,finder+FD900R12IP4D,FD900R12IP4D+tutorials,FD900R12IP4D+download