IXTA8N50P
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Transistor: N-MOSFET; unipolar; 500V; 8A; 150W; TO263; 400ns
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Inventory: 6751
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 400 mJ
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.8Ohm
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 23 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 28 ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 100μA
Rds On (Max) @ Id, Vgs 800m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Current Rating 8A
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series PolarHV?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 4 Weeks
Alternative Model
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