IXTA2R4N120P
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1200V 2.4A TO-263
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Buying Options
Total Price: USD $4.73
Unit Price: USD $4.72625
≥1 USD $4.72625
≥10 USD $3.8779
≥100 USD $3.7563
≥500 USD $3.63565
≥1000 USD $3.51405
Inventory: 1077
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 6A
Drain to Source Breakdown Voltage 1.2kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.4A
Turn-Off Delay Time 70 ns
Fall Time (Typ) 32 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1200V
Rise Time 25 ns
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 1207pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series Polar?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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