TPS1101DG4
RoHS
/
Package SOIC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Single P-Ch Enh-Mode MOSFET
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Technical Details
Physical
Mount Surface Mount
Package / Case SOIC
Number of Pins 8
Technical
JESD-609 Code e4
Moisture Sensitivity Level (MSL) 1
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Operating Temperature 125°C
Min Operating Temperature -40°C
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 8
Number of Elements 1
Power Dissipation-Max 791mW
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 791mW
Case Connection ISOLATED
Turn On Delay Time 6.5 ns
Transistor Application SWITCHING
Rise Time 5.5ns
Drain to Source Voltage (Vdss) -15V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 2V
Drain to Source Breakdown Voltage 15V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 90mOhm
Rds On Max 90 mΩ
Dimensions
Height 1.58mm
Length 4.9mm
Width 3.91mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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