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IXTA1N100

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 1.5A TO-263
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Buying Options
Total Price: USD $13.32
Unit Price: USD $13.3228
≥1 USD $13.3228
≥10 USD $10.93165
≥100 USD $10.58965
≥500 USD $10.2486
≥1000 USD $9.9066
Inventory: 1276
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 6A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 1.5A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 19 ns
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Rds On (Max) @ Id, Vgs 11 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 54W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 54W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Resistance 11Ohm
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 28 Weeks

Alternative Model

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