Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.005Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 84A
Turn-Off Delay Time 62 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Current - Continuous Drain (Id) @ 25°C 84A Ta
Input Capacitance (Ciss) (Max) @ Vds 3845pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 83W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ