Avalanche Energy Rating (Eas) 500 mJ
Pulsed Drain Current-Max (IDM) 350A
Drain to Source Breakdown Voltage 100V
Continuous Drain Current (ID) 130A
Turn-Off Delay Time 44 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 5080pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 9.1m Ω @ 25A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ