Feedback Cap-Max (Crss) 69 pF
DS Breakdown Voltage-Min 25V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 13.4 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 8V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 12.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Rds On (Max) @ Id, Vgs 4.7m Ω @ 20A, 8V
Transistor Application SWITCHING
Turn On Delay Time 5.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta
Base Part Number CSD16342
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ